On standardization of low symmetry crystal fields

Standardization methods of low symmetry – orthorhombic, monoclinic and triclinic – crystal fields are formulated and discussed. Two alternative approaches are presented, the conventional one, based on the second-rank parameters and the standardization based on the fourth-rank parameters. Mainly f-electron systems are considered but some guidelines for d-electron systems and the spin Hamiltonian describing the zero-field splitting are given. The discussion focuses on premises for choosing the most suitable method, in particular on inadequacy of the conventional one. Few examples from the literature illustrate this situation.     

Radiation damage in polymer films from grazing‐incidence X‐ray scattering measurements

Grazing‐incidence X‐ray scattering (GIXS) is widely used to analyze the crystallinity and nanoscale structure in thin polymer films. However, ionizing radiation will generate free radicals that initiate crosslinking and/or chain scission, and structural damage will impact the ordering kinetics, thermodynamics, and crystallinity in many polymers. We report a simple methodology to screen for beam damage that is based on lithographic principles: films are exposed to patterns of X‐ray radiation, and changes in polymer structure are revealed by immersing the film in a solvent that dissolves the shortest chains. The experiments are implemented with high throughput using the standard beam line instrumentation and a typical GIXS configuration. The extent of damage (at a fixed radiation dose) depends on a range of intrinsic material properties and experimental variables, including the polymer chemistry and molecular weight, exposure environment, film thickness, and angle of incidence. The solubility switch for common polymers is detected within 10–60 s at ambient temperature, and we verified that this first indication of damage corresponds with the onset of network formation in glassy polystyrene and a loss of crystallinity in polyalkylthiophenes. Therefore, grazing‐incidence X‐ray “patterning” offers an efficient approach to determine the appropriate data acquisition times for any GIXS experiment. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 1074–1086     

Hierarchically Designed Three‐Dimensional Macro/Mesoporous Carbon Frameworks for Advanced Electrochemical Capacitance Storage

Mesoporous carbon (m‐C) has potential applications as porous electrodes for electrochemical energy storage, but its applications have been severely limited by the inherent fragility and low electrical conductivity. A rational strategy is presented to construct m‐C into hierarchical porous structures with high flexibility by using a carbon nanotube (CNT) sponge as a three‐dimensional template, and grafting Pt nanoparticles at the m‐C surface. This method involves several controllable steps including solution deposition of a mesoporous silica (m‐SiO₂) layer onto CNTs, chemical vapor deposition of acetylene, and etching of m‐SiO₂, resulting in a CNT@m‐C core–shell or a CNT@m‐C@Pt core–shell hybrid structure after Pt adsorption. The underlying CNT network provides a robust yet flexible support and a high electrical conductivity, whereas the m‐C provides large surface area, and the Pt nanoparticles improves interfacial electron and ion diffusion. Consequently, specific capacitances of 203 and 311 F g^?1 have been achieved in these CNT@m‐C and CNT@m‐C@Pt sponges as supercapacitor electrodes, respectively, which can retain 96 % of original capacitance under large degree compression.     

电气材料铜及铜合金中痕量杂质砷元素的氢化物发生-原子荧光光谱法测定

本文建立了氢化物发生-原子荧光光谱法测定电气材料铜及铜合金中痕量杂质元素砷的方法。通过使用L-半胱氨酸与铜基体形成络合物,抗坏血酸充分预还原砷,消除了基体干扰,并实现了铜及铜合金中痕量杂质砷的准确测定。在经过优化的实验条件下,砷的检出限为0.12 ng·m L-1,线性相关系数优于0.999,相对标准偏差小于4%。用加标回收法测定实际样品,回收率在92%到103%之间。该法操作简便,灵敏度高,无需基体预分离。     

用于液体激光介质的Nd~(3+)离子掺杂氟化镧纳米颗粒的制备与性能表征

设计并合成了掺杂不同Nd3+离子浓度的氟化镧纳米颗粒,并用油酸进行了表面修饰,使得这类纳米颗粒可分散于常见的有机溶剂中形成透明、均一、稳定的溶液。对纳米颗粒的结构、晶相以及发光性能进行了表征。固体和溶液材料在1 060 nm都有强的发射峰,说明纳米晶格可有效地保护Nd3+离子免受外界环境对发光的猝灭影响。纳米颗粒有机溶液的吸收损耗和散射损耗测试结果表明,其总损耗系数能够满足激光介质材料的损耗要求,为该材料的实用化打下了基础。     

基于四波混频过程和线性分束器产生四组份纠缠

多组份纠缠是量子信息处理的重要资源,它的产生通常涉及到许多复杂的线性和非线性过程.本文从理论上提出了一种利用两个独立的四波混频过程和线性分束器产生真正的四组份纠缠的方案,其中,线性分束器的作用是将两个独立的四波混频过程联系起来.首先应用部分转置正定判据研究了强度增益对四组份纠缠的影响,结果表明,在整个增益区域内都存在真正的四组份纠缠,并且随着强度增益的增加,纠缠也在增强.然后研究了线性分束器的透射率对四组份纠缠的影响,发现只要线性分束器的透射率不为0或1,该系统也可以产生真正的四组份纠缠.最后,通过研究该系统可能存在的三组份纠缠和两组份纠缠来揭示该系统的纠缠结构.本文理论结果为实验上利用原子系综四波混频过程产生真正的四组份纠缠提供了可靠的方案.     

Optimization of STEM-HAADF Electron Tomography Reconstructions by Parameter Selection in Compressed Sensing Total Variation Minimization-Based Algorithms

A novel procedure to optimize the 3D morphological characterization of nanomaterials by means of high angle annular dark field scanning-transmission electron tomography is reported and is successfully applied to the analysis of a metal- and halogen-free ordered mesoporous carbon material. The new method is based on a selection of the two parameters (μ and β) which are key in the reconstruction of tomographic series by means of total variation minimization (TVM). The parameter-selected TVM reconstructions obtained using this approach clearly reveal the porous structure of the carbon-based material as consisting of a network of parallel, straight channels of ≈6 nm diameter ordered in a honeycomb-type arrangement. Such an unusual structure cannot be retrieved from a TVM 3D reconstruction using default reconstruction values. Moreover, segmentation and further quantification of the optimized 3D tomographic reconstruction provide values for different textural parameters, such as pore size distribution and specific pore volume that match very closely with those determined by macroscopic physisorption techniques. The approach developed can be extended to other reconstruction models in which the final result is influenced by parameter choice.     

钴掺杂MoSe2共生长中氢气的作用分析及磁电特性研究

采用原位共生长化学气相沉积法,以Co3O4、MoO3、Se粉末为前驱物,710℃下在SiO2衬底上生长掺钴MoSe2纳米薄片,分析讨论氢气含量对其生长及调节机理的影响.表面形貌分析表明,氢气的引入促进了成核所需的氧硒金属化合物以及横向生长中需要的CoMoSe化合物分子的生成;AFM(Atomic Force Microscope)结果表明氢气有利于生长单层二维超薄掺钴MoSe2.随着Co3O4前驱物用量的增加,样品的拉曼和PL(Photoluminescence)谱图分别表现出红移和蓝移现象,带隙实现从1.52—1.57 eV的调制.XPS(X-ray photoelectron spectroscopy)结果分析得到Co的元素组分比为4.4%.通过SQUID-VSM(Superconducting QUantum Interference Device)和器件电学测试分析了样品的磁电特性,结果表明Co掺入后MoSe2由抗磁性变为软磁性;背栅FETs器件的阈值电压比纯MoSe2向正向偏移5 V且关态电流更低;为超薄二维材料磁电特性研究及应用拓展提供了基础探索.